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58 points JumpCrisscross | 10 comments | | HN request time: 0.836s | source | bottom
1. hristov ◴[] No.43667429[source]
This is very interesting and cannot happen fast enough, considering the current worldwide transformer shortage.

I have a question for people more familiar with these. What exactly happens at the isolation stage. They say it includes a high frequency transformer (HFT). But its input and out put is DC. And classic transformers operate on AC. So in order to get the transformer working, one would have to chop up the incoming dc power into a square wave or a sine wave. But what transistors can you use to do this, considering you are dealing both with very high power and very high frequencies?

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2. cyberax ◴[] No.43667646[source]
You need to use nuclear-powered transistors!

No, I'm not joking. For these kinds of voltages, you need to use highly homogenous doped silicon, and the only way to produce it is to irradiate silicon with neutrons. It transmutes some of the silicon atoms into phosphorus: https://nrl.mit.edu/facilities/ntds/

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3. yjftsjthsd-h ◴[] No.43667720[source]
I assume that if people are going to the trouble to literally irradiate the material in order to get what they need, they can't get the results by just mixing in phosphorus. Could somebody who actually understands this tell me why that is?
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4. itcrowd ◴[] No.43667857[source]
The keyword you are looking for is IGBT (insulated-gate bipolar transistor) -- the type of transistor used in such DC-DC converters
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5. cyberax ◴[] No.43667929{3}[source]
Because there is no other way to produce homogenous enough thick wafers of doped silicon. Other methods rely on diffusion from the surface, which is not enough for this case.

And doping during crystal growth doesn't produce homogenous enough silicon.

6. CorrectHorseBat ◴[] No.43667984{3}[source]
https://www.waferworld.com/post/the-complete-guide-to-doping...

It's apparently possible for boron doping.

I think because phosphorus is bigger than silicium you'll get too many defects in the crystal, while with the smaller boron it is not an issue.

7. hristov ◴[] No.43667986[source]
I don't think IGBTs can handle frequencies up to "several megahertz" as the article says.
8. bacon_waffle ◴[] No.43668221[source]
There are techniques for "stack"ing transistors so that the individual swtiching devices see potentials that are within spec and much lower than the voltage switched by the overall circuit.
9. Gibbon1 ◴[] No.43668505[source]
Power transistors can be had that can switch up to maybe 3000V at the most. But maybe 1200-1500V is more common.

You can stack power transistors to switch higher voltages on the primary side. On the secondary side you just need an H-bridge. Which can be made up of transistors in parallel.

We've had high power high voltage transistors for about 40 years now. A lot of this isn't technical but rather economic. As the price falls the applications where they are cheaper increases. It's notable for instance Toyota started work on their hybrid drive in the mid nineties when inverters for 10-100 HP motors became cheap enough.

10. pwg ◴[] No.43669270[source]
The diagrams on the page are nothing more than the typical switch mode power supply [1] layout, the only difference being handling grid power levels and conversion back to AC at the output (most switch mode PSU's output DC).

[1] https://en.wikipedia.org/wiki/Switching_power_supply